Vybran\u00e9 vedeck\u00e9 \u010dl\u00e1nky reprezentuj\u00face dosiahnut\u00e9 v\u00fdsledky:<\/p>\n\n\n\n
- \n
- From single GaAs detector to sensor for radiation imaging camera, In Applied Surface Science. Vol. 461, (2018), s. 3-9. https:\/\/doi.org\/10.1016\/j.apsusc.2018.06.269<\/a><\/li>\n\n\n\n
- Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties, In Applied Surface Science. Vol. 461, (2018), s. 276-280. https:\/\/doi.org\/10.1016\/j.apsusc.2018.07.008<\/a><\/li>\n\n\n\n
- Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different
thickness, In Applied Surface Science. Vol. 536, (2021), s. 147801. https:\/\/doi.org\/10.1016\/j.apsusc.2020.147801<\/a> <\/li>\n\n\n\n- Radiation hardness limits in gamma spectrometry of semi-insulating GaAs detectors irradiated by
5 MeV electrons. In Journal of Instrumentation (JINST 15), 2020 JINST 15 C01024, https:\/\/iopscience.iop.org\/article\/10.1088\/1748-0221\/15\/01\/C01024<\/a><\/li>\n\n\n\n- From single silicon carbide detector to pixelated structure for radiation imaging camera. In Journal of Instrumentation (JINST 17), 2022 JINST 17 C12005, available on the internet: https:\/\/doi.org\/10.1088\/1748-0221\/17\/12\/C12005<\/a>
https:\/\/iopscience.iop.org\/article\/10.1088\/1748-0221\/17\/12\/C12005<\/a><\/li>\n\n\n\n- Spectral tracking of protons by the Timepix3 detector with GaAs, CdTe and Si sensors, In Journal of Instrumentation 18. (2023) C01022, DOI\u00a010.1088\/1748-0221\/18\/01\/C01022 https:\/\/iopscience.iop.org\/article\/10.1088\/1748-0221\/18\/01\/C01022<\/a><\/li>\n\n\n\n
- High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 \u25e6C, In Applied Surface Science 635 (2023) 157708. https:\/\/doi.org\/10.1016\/j.apsusc.2023.157708<\/a><\/li>\n<\/ol>\n\n\n\n
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<\/figure>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"V\u00fdskum polovodi\u010dov\u00fdch detektorov je realizovan\u00fd v\u00a0Laborat\u00f3riu polovodi\u010dov\u00fdch detektorov \u00daJFI FEISTU, v\u00a0spolupr\u00e1ci s\u00a0El\u00da SAV na jej pracovisk\u00e1ch a\u00a0v\u00a0medzin\u00e1rodnej spolupr\u00e1ci s\u00a0\u010fal\u0161\u00edmi laborat\u00f3riamivo svete ako napr. CEA Cadarache FR, \u00daTEF \u010cVUT, Praha, CZ. V\u00fdskum je zameran\u00fd najm\u00e4 na nov\u00e9perspekt\u00edvne polovodi\u010dov\u00e9 materi\u00e1ly ako SiC a\u00a0GaAs a\u00a0na pr\u00edpravu detektorov pre aplik\u00e1ciev\u00a0spektrometrii, v digit\u00e1lnej r\u00e1diografii a\u00a0pre zobrazovanie a\u00a0vyhodnocovanie parametrov st\u00f4p \u010dast\u00edcv\u00a0okol\u00ed ur\u00fdch\u013eova\u010dov \u010di vo vesm\u00edre. \u00daspechom na medzin\u00e1rodnej \u00farovni je v\u00fdvoj prv\u00e9ho hybridn\u00e9homulti-pixelov\u00e9ho detektora (TPX3) s\u00a0radia\u010dne odoln\u00fdm SiC senzorom. V\u00fdskum je realizovan\u00fd s\u00a0podporou projektov ako: DS-FR-22-0012, SICDET, SiC Timepix Detektor, 2023-2025 APVV-22-0382, PIRADUNEW, Perspekt\u00edvne detektory ionizuj\u00faceho \u017eiarenia pre nepokryt\u00e9 energetick\u00e9 okno neutr\u00f3nov, 2023-2027 APVV-18-0273, RADSEN Radia\u010dne… <\/p>\n","protected":false},"author":1,"featured_media":632,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[12],"tags":[],"class_list":["post-144","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-vyuzitie-ionizujuceho-ziarenia"],"_links":{"self":[{"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/posts\/144","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/comments?post=144"}],"version-history":[{"count":0,"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/posts\/144\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/media\/632"}],"wp:attachment":[{"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/media?parent=144"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/categories?post=144"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ujfi.fei.stuba.sk\/en\/wp-json\/wp\/v2\/tags?post=144"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
- Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties, In Applied Surface Science. Vol. 461, (2018), s. 276-280. https:\/\/doi.org\/10.1016\/j.apsusc.2018.07.008<\/a><\/li>\n\n\n\n